Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications

The current research work focuses on the realization of n-ZnO/MoO3/PEDOT:PSS-based hybrid device. The fabricated device exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The optimum n-ZnO and intermediate MoO(3)layers were deposited using the spray pyrolysis technique at 698 K and 670 K, respectively. Using a spin-coating technique, the PEDOT:PSS layer was deposited at 2000 rpm. The structural analysis and the cross-sectional FESEM analysis of the fabricated device validate the presence of a multi-layered thin-film structure. The current-voltage (I-V), UV photoresponse, and RS behavior of the fabricated n-ZnO/MoO3/PEDOT:PSS-based hybrid device was investigated. The hybrid device shows a higher photoresponsivity (R) value of 0.42 A/W with a fast rise and fall time value measured as 310 ms and 970 ms, respectively. The RS analysis of the fabricated hybrid device shows a stable endurance characteristic for more than 100 cycles. Formation/rupture of conductive filaments using anions (O2-) and cations (Ag+) across the interface of the fabricated hybrid device was proposed as a possible RS mechanism.

Automated summary

The current research focuses on a hybrid device based on n-ZnO/MoO3/PEDOT:PSS, which can be used for UV light detection and non-volatile resistive switching memory applications. Through the deposition of multi-layered thin films, the fabricated device exhibits good performance characteristics, such as high photoresponsivity and stable endurance.