Interface-induced negative differential resistance and memristive behavior in Gr/MoSe2 heterostructure

Heterostructures of materials can possess the prominent characteristics of their individual layers or gain newly emerged interface effects between the layers. Interface effects gain utmost importance in two-dimensional (2D) heterostructures due to the comparable bulk to the interface volume. Specifically, the interfacing of the very well-recognized conductive graphene (Gr) 2D material with newly developing semiconductive 2D materials is a rich field to be investigated for electronic applications. Here, we present the growth of Gr/MoSe2 heterostructure with emerged memristance and negative differential resistance (NDR) effect. Bare Gr and bare MoSe2 layers showed no memristance and NDR response, but when stacked in a vertical structure, they showed memristive and NDR behavior in the I-V response, thanks to the interface-induced effects. The layers are fabricated via the chemical vapor deposition method at cm scales, showing viability for real device applications. We discuss both ionic and electronic effects and show that the electronic effects govern the observed NDR effects and memristance can be attributed to electronic and/or ionic effects. The observed interface-induced rich electronic phenomena may be considered for the future development of 2D materials-based electronic devices.

Automated summary

This study investigates the interface effects between conductive graphene (Gr) and semiconducting MoSe2 layers, and finds that the Gr/MoSe2 heterostructure exhibits memristance and negative differential resistance (NDR) behavior. The layers are fabricated using chemical vapor deposition, and electronic effects are shown to govern the observed NDR effects.