Investigation of some physical and photoconductive properties of sprayed CuS2 film

Copper sulfide (CuS2) has been prepared by spray pyrolysis process. Structural and morphological properties of prepared sample were investigated by XRD and AFM. The X-ray diffraction showed that the structure of this film is cubic. The film surface was homogenous and dense. The UV absorbance and reflectance spectra show a high absorbance with gap energy of 1.87 eV estimated by Tauc's model. The photoconductive studies reveal that the photocurrent versus light intensity and polarization follows a power low and linear trend, respectively. In addition, the CuS2 film had excellent stability. AC conductivity (G(ac)) reveals the semiconductor behavior and the activation energy is estimated to be 0.5 eV. It is also obvious that the conductance AC follows jonscher's universal power law. The exponent s decreases with temperature increase, showing that the conduction phenomena is related to Correlated Barrier Hopping (CBH). The imaginary and real impedance parts are plotted in Nyquist diagrams and an equivalent circuit is deduced. Consequently, the prepared CuS2 film is suitable for optoelectronic applications, such as solar cells and photodetector.

Automated summary

In this study, copper sulfide film was prepared using spray pyrolysis process. The film exhibited a cubic structure and a homogeneous and dense surface. The film showed high absorbance with a gap energy of 1.87 eV. The photocurrent showed a power law and linear trend with light intensity and polarization, respectively. The film had excellent stability and semiconductor behavior. Based on these findings, the prepared copper sulfide film is suitable for optoelectronic applications.