Influence of zirconium ions on the key characteristics of V2O5 nanorods and current-voltage features of the n-ZrxV2O5/p-Si photodetector

This article reports microstructural, morphological, optical, and photoresponse characteristics of pure and zirconium-doped V2O5 nanorods (Zr:V2O5; Zr at. 1, 3, 5, and 7 wt%) that were synthesized via the wet precipitation method. Undoubtedly, under experimental conditions, a growth mechanism has been proposed which explains morphological evolution. The microstructural analysis confirmed that the prepared samples showed a broad peak consistent with the V2O5 orthorhombic structure, and the absences of other reflections in this pattern ensure the phase purity. The optimized average crystallite size is determined by using Scherrer's equation from the most influential (002) peak of diffraction, which has coincided with those calculated by the TEM micrograph. SEM images showed agglomerated particles on the surfaces owing to an increase in the Zr-doping levels. The outcomes of Raman and XPS indicate that Zr doping can facilitate the generation of V5+ and oxygen vacancy. The recorded UV-DRS spectra reveal the redshifts, and the estimated optical bandgap (E-g) was decreasing with increasing Zr amount, which is further confirmed by PL studies. We used the nebulizer spray technique, a cost-effective, sophisticated, and effective way to formulate an n-ZrxV2O5/p-Si photodetector. The formulated n-ZrxV2O5/p-Si photodetector has good photoconducting behavior.

Automated summary

This study reports the microstructural, morphological, optical, and photoresponse characteristics of pure and zirconium-doped V2O5 nanorods synthesized via the wet precipitation method. Results show that Zr doping can facilitate the generation of V5+ and oxygen vacancy, leading to a decrease in the optical bandgap, and the prepared photodetector exhibits good photoconducting behavior. The growth mechanism, microstructural analysis, and SEM images provide insights into the effects of Zr doping on V2O5 properties.