4.7 Article

Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyOx transistors and exploration in digital circuits

期刊

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 87, 期 -, 页码 143-154

出版社

JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2021.01.066

关键词

Dysprosium oxide (DyOx); Thin film transistors (TFTs); Aging-diffusion; Inverter; Illumination bias stability

资金

  1. National Natural Science Foundation of China [11774001]
  2. open fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University [S01003101]
  3. Anhui University
  4. Provincial Natural Science Research Program of Higher Education Institutions of Anhui Province [KJ2018A0026]
  5. Natural Science Research Projectof Colleges and Universities in Anhui Province [KJ2018ZD060]
  6. Outstanding Young Talents Support Program in Collegesand Universities [gxyq2020108]

向作者/读者索取更多资源

This study focused on preparing solution-driven DyOx films to function as the dielectric layer for high-performance InZnO/DyOx thin film transistors (TFTs). Results showed that air-annealed InZnO/DyOx TFTs exhibited improved electrical performance and high stability in various environments, indicating potential applications in flexible transparent electronics with low power consumption.
In current study, the rare-reported solution-driven DyOx films have been prepared to act as the dielectric layer of high performance InZnO/DyOx thin film transistors (TFTs). Annealing temperature dependent thermal decomposition, morphology, crystallization behavior, and chemical compositions of DyOx and InZnO films have been investigated respectively. Results have demonstrated that air-annealed InZnO/DyOx TFTs possess the improved electrical performance, including ultrahigh on/off current ratio of 1 x 109, larger saturation mobility of 12.6 cm(2) V-1 s(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity (RH) of 40 % air ambient, which has been explored by the variable range-hopping (VRH) percolation model and energy band theory. The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V. To confirm its feasible application in digital circuit, a resistor-loaded inverter based on InZnO/DyOx TFTs has been constructed. A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V. As a result, it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyOx TFTs, indicating its potential application prospects in flexible transparent electronics with low power consumption. (C) 2021 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

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