Mechanism of hopping conduction in Be-Fe-Al-Te-O semiconducting glasses and glass-ceramics

Electrical properties of beryllium-alumino-tellurite glasses and glass-ceramics doped with iron ions were studied using impedance spectroscopy. The conductivity was measured over a wide frequency range from 10 mHz to 1 MHz and the temperature range from 213 to 473 K. The D.C. conductivity values showed a correlation with the Fe-ion concentration and ratio of iron ions on different valence states in the samples. On the basis of Jonscher universal dielectric response the temperature dependence of conductivity parameters were determined and compared to theoretical models collected by Elliott. In glasses, the conduction process was found to be due to the overlap polaron tunneling while in glass-ceramics the quantum mechanical tunneling between semiconducting crystallites of iron oxides is proposed. The D.C. conductivity was found not to follow Arrhenius relation. The Schnakenberg model was used to analyze the conductivity behavior and the polaron hopping energy and disorder energy were estimated. Additionally, the correlation between alumina dissolution and basicity of the melts was observed.

Automated summary

The electrical properties of beryllium-alumino-tellurite glasses and glass-ceramics doped with iron ions were investigated using impedance spectroscopy. The conductivity was found to be correlated with the concentration and valence states of iron ions. The conduction process in glasses was attributed to overlap polaron tunneling, while in glass-ceramics, quantum mechanical tunneling between semiconducting crystallites of iron oxides was proposed. The relationship between alumina dissolution and melt basicity was observed.