Preparation and Thermoelectric Properties of Type-VIII Single-Crystalline SmxBa8-xGa16Sn30 Clathrate

In this study, based on the stoichiometric ratio of Sm: Ba: Ga: Sn = x: 8 - x: 16: 50 (x = 0, 0.25, 0.5, 0.75, 1, 1.5, 2), Sm-doped type-VIII single-crystalline clathrate SmxBa8-xGa16Sn30 thermoelectric material was successfully prepared via Sn-flux method. The electrical properties were investigated by the measurement of conductivity, Seebeck coefficient and Hall coefficient. The results show that the solubility of Sm in type-VIII Ba8Ga16Sn30 is very low, and the lattice constant of the samples containing Sm decreases compared with type-VIII Ba8Ga16Sn30. However, for all samples containing Sm, the lattice constant increases with the increase of the initial content of Sm. Sm plays a modulation framework atoms ratio role in the cage compound. Moreover, the carrier mobility of the sample is greatly improved by Sm doping. The related electrical properties exhibit irregular changes with the increase of the initial content of Sm. The sample with x = 0.75 consistently shows high Seebeck coefficient and conductivity in the 300-600 K test temperature range. The maximum power factor is 2.25 x 10(-3) W/mK(2) near 442 K, indicating that the energy band structure is optimized, while the conductivity is improved. The ZT value is estimated to be 1.31 at 457 K.

Automated summary

In this study, Sm-doped type-VIII single-crystalline clathrate SmxBa8-xGa16Sn30 thermoelectric material was successfully prepared via Sn-flux method, showing low solubility of Sm in Ba8Ga16Sn30 but significantly improved carrier mobility. The electrical properties exhibited irregular changes with the increase of initial Sm content, where the sample with x = 0.75 consistently showed high Seebeck coefficient and conductivity.