期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 39, 期 24, 页码 7842-7849出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2021.3093463
关键词
Silicon; Linearity; Modulation; Nonlinear optics; Voltage measurement; Optical filters; Optical modulation; Microwave photonics; modulation linearity; Si ring modulator
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2020R1A2C2015089]
The modulation linearity of Si ring modulators (RMs) was investigated using numerical simulation and experimental verification based on coupled-mode theory. The numerical values of key parameters were experimentally extracted and the simulation and measurement results showed good agreement. The study characterized the influence of input optical wavelength and power on the Si RM linearity.
Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
