Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 mu m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9(-0.2)(+0.1))% was measured together with a time resolution of (36.4 +/- 0.8) ps at the highest preamplifier bias current working point of 150 mu A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.

Automated summary

A monolithic silicon pixel detector prototype has been developed using SiGe BiCMOS technology, demonstrating good performance in both laboratory calibration and experimental tests.