Influence of Cu Irons on Structural, Optical, and Electrical Properties of Pure WS2 Thin Films and Development of p-Si/n-Cu@WS2 Photodiode for Optoelectronic Application

Presently, the applications of optoelectronics products have assisted the fields of telecommunication in providing value-added products. In this sense, pure Tungsten disulphide (WS2) and Copper doped WS2 thin films are coated via the JNSP technique with different doping levels such as 1, 3, and 5 wt% of Cu, and the optimized substrate temperature of 450 degrees C. The morphology, structural, particle size, optical, and electrical properties of coated pristine and Cu-WS2 thin films were characterized by scanning electron microscopy (SEM), energy dispersive microscopy (EDS), X-ray diffraction (XRD), UV spectra, Photoluminescence spectroscopic (PL) and Hall Effect measurements. The XRD results exhibit the prepared films have polycrystalline in nature with a tetragonal phase and the calculated crystallite size varied between 16 and 74 nm. The SEM images show the uniform grain size. The optical bandgap of 2.42 eV was obtained in the 5 wt% of Cu doped films. Hall measurements depicted that the pristine and Cu-doped WS2 films have n-type behaviour with carrier concentration is about 10(8) cm(-3). Moreover, the fabricated p-Si/n-CuWS2 diode parameters like ideality factor (n), barrier height (phi(B)), and reverse saturation current (I-o) values are measured.

Automated summary

The study involved coating WS2 and Cu-doped WS2 thin films using the JNSP technique with different doping levels and optimal substrate temperature. Various characterization methods were used to analyze the morphology, structure, and properties of the films. The results showed that Cu-doped WS2 thin films had improved optical bandgap and n-type behavior compared to pristine films.