Recent Advances in Halide Perovskite-Based Nonvolatile Resistive Random-Access Memory

Nonvolatile resistive random-access memory devices have emerged as a potential entrant for future-generation memory technology due to their fast switching operation, low power consumption, and multibit storage capability. Among them, halide perovskite (HP)-based resistive random-access memory (RRAM) devices are considered to represent a new class of data storage devices because of the excellent switching features of HP materials. Compared with conventional, charge-based memory devices, the virtues of RRAM devices include multilevel data storage capability, smaller size, and lower energy per bit (similar to fJ/bit). Although many investigations have been performed on switching materials, the analysis of HPs as switching material for RRAM devices is still in the early research stages. Herein, recent progress on HP-based RRAM devices is extensively and systematically summarized. Firstly, the conducting filament-based switching mechanism is introduced, then various aspects of RRAM devices based on different HPs are discussed. Also, the significance and recent advances of RRAM to human-brain-like artificial synaptic systems are introduced briefly. Finally, a brief conclusion is given on the development and challenges of HP-based RRAMs.

Automated summary

Nonvolatile resistive random-access memory devices, especially those based on halide perovskite materials, are considered as potential candidates for future-generation memory technology due to their fast switching operation, low power consumption, and multibit storage capability. Although significant progress has been made, the analysis of halide perovskites as switching materials for RRAM devices is still in the early research stages.