The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors

In amorphous InAlZnO (a-IAZO), the addition of the third cation of Al further slows the crystallization kinetics of In2O3 and enhances amorphous phase stability, compared to the binary cation system of InZnO. In addition, substantially high carrier mobilities of a-IAZO are obtained, in its unannealed state: Hall mobility of 30-50 cm(2)/Vs at a high carrier density regime (>similar to 10(18)/cm(3)) and thin film transistor (TFT) field effect mobility of similar to 8-15 cm(2)/Vs at a low carrier density regime (

Automated summary

In amorphous InAlZnO, the addition of trivalent aluminum cations slows down the crystallization of In2O3 and improves the stability of the amorphous phase. It also results in high carrier mobilities in the unannealed state.