期刊
JOURNAL OF CRYSTAL GROWTH
卷 576, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2021.126382
关键词
A1; Characterization; A2; Growth from solutions; A2; Single crystal growth; B1; Chromium-silicon alloys; B1; Silicon carbide; B2; Semiconducting silicon compounds
资金
- JSPS KAKENHI [17H04960, 18K189340, 19H00820]
- Cooperative Research Program of Network Joint Research Center for Materials and Devices
- Grants-in-Aid for Scientific Research [19H00820, 17H04960] Funding Source: KAKEN
Utilizing the newly fabricated SiC/C gradient crucible allows for stable long-term growth of silicon carbide, maintaining crystal growth behavior and quality.
To develop a long-term and stable growth technology for the solution growth of silicon carbide (SiC), the use of the newly fabricated SiC/C gradient crucible was studied. The fabrication of the SiC/C gradient structure was achieved by a two-step heat treatment, and a SiC/C structure with a high SiC areal ratio of more than 50% was obtained by Si infiltration into the porous graphite. Then, the top-seeded solution growth was performed using the fabricated SiC/C gradient crucible that revealed the suppression of the compositional change of the solution during the growth in comparison to the growth using a graphite crucible, which is the general method for the SiC solution growth. Furthermore, the SiC growth behaviors and crystal qualities were maintained when the SiC/C gradient crucible was used instead of the graphite crucible. The use of such a high-purity SiC/C gradient crucible was thus found to be effective in achieving crystal growth with less compositional change, which would enable long-term growth while maintaining a stable growth interface.
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