期刊
JOURNAL OF CHEMICAL PHYSICS
卷 156, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0079298
关键词
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资金
- Deutsche Forschungsgemeinschaft (DFG) [BA 1422/16]
- European Commission via the Marie Sklodowska-Curie action Phonsi [H2020-MSCA-ITN642656]
- Israel Science Foundation [2528/19]
- USA National Science Foundation-USA/Israel Binational Science Foundation (NSF-BSF) [2017637]
This study investigates the temperature dependence of Fano resonances observed in photoluminescence from flakes of layered semiconductor antiferromagnet chromium thiophosphate (CrPS4). Two Fano resonances with different temperature dependencies are identified. The continuous background responsible for the resonances is attributed to the d-d transition of the optically active Cr3+ center, while the interfering discrete states are suggested to arise from localized atomic phosphorus.
A Fano resonance, as often observed in scattering, absorption, or transmission experiments, arises from quantum interference between a discrete optical transition and a continuous background. Here, we present a temperature-dependent study on Fano resonances observed in photoluminescence from flakes of the layered semiconductor antiferromagnet chromium thiophosphate (CrPS4). Two Fano resonances with a distinctly different temperature dependence were identified. The continuous background that is responsible for the Fano resonances is attributed to the d-d transition of the optically active Cr3+ center, predominantly the spin-forbidden E-2(g) & RARR; (4)A(2g) transition with contributions of the broad-band T-4(2g) & RARR; (4)A(2g) transition. The discrete states that interfere with this continuous background are suggested to arise from localized atomic phosphorus. A model idea for explaining the individual temperature dependence of the Fano resonances is presented.
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