Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

Degradation of InGaN-GaN LEDs has been the subject of intense investigations in the past few years. While current- and temperature-induced degradation processes have been described, the impact of photon-induced degradation has not been investigated in detail in the literature. This paper aims at improving the understanding of the mechanisms responsible for the degradation of the InGaN subject to high photon densities by stressing the devices under a high-intensity laser beam in open-circuit conditions (i.e., in the absence of external current). We analyzed the degradation by means of electrical, optical, and deep-level characterization techniques. First, we demonstrate the existence of optically induced degradation processes in GaN LEDs: from photoluminescence measurements, we observed a decrease in the luminescence after stress, more prominent in the region irradiated during stress. Second, we ascribe this effect to a decrease in internal quantum efficiency due to the generation of non-radiative defects within the active region. Third, by steady-state photocapacitance measurements, we reveal the presence of a shallow level with an energy of E-C-2.2 eV, which can be ascribed to gallium vacancies and its complexes with oxygen and nitrogen and can be related to the increase in yellow luminescence.

Automated summary

The degradation of InGaN-GaN LEDs under high photon densities has been studied, revealing optically-induced processes that decrease internal quantum efficiency. Measurements show a shallow level related to defects which result in an increase in yellow luminescence.