Growth of bulk β-Ga2O3 single crystals by the Czochralski method

The present Tutorial provides a description of the growth of bulk beta-Ga2O3 single crystals by the Czochralski method with a focus on the critical growth aspects. In particular, it details the thermodynamics of Ga2O3 as the key factor for crystal growth along with comprehensive solutions that are essential for crystal size scale-up. Also, free carrier absorption is discussed, as it has a great impact on growth stability. The crystal growth direction and intentional doping, as important factors for crystal growth, are described as well. All of the aspects of the crystal growth are accompanied by resulting crystals, their structural quality, and basic physical properties. (C) 2022 Author(s).

Automated summary

This Tutorial provides a detailed description of the critical aspects of bulk beta-Ga2O3 single crystal growth using the Czochralski method. It covers the thermodynamics of Ga2O3, comprehensive solutions for crystal size scale-up, the impact of free carrier absorption on growth stability, and important factors such as crystal growth direction and intentional doping. The resulting crystals' structural quality and basic physical properties are also discussed.