相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Anomalous enhancement of thermoelectric power factor by thermal management with resonant level effect
Shunya Sakane et al.
JOURNAL OF MATERIALS CHEMISTRY A (2021)
Hole mobility enhancement in strained nanocrystalline architecture of group IV semiconductors
Sen Sun et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing
Chuan-Pu Chou et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Metal-induced layer exchange of group IV materials
Kaoru Toko et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Four-step heating process for solid-phase crystallization of Ge leading to high carrier mobility
Takuto Mizoguchi et al.
APPLIED PHYSICS EXPRESS (2020)
Enhancing sensitivity of lateral flow assay with application to SARS-CoV-2
Tao Peng et al.
APPLIED PHYSICS LETTERS (2020)
Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin
Ryo Matsumura et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)
Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
D. Takahara et al.
APPLIED PHYSICS LETTERS (2019)
Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation
Masashi Higashiyama et al.
JOURNAL OF APPLIED PHYSICS (2019)
Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing
Lu Zhang et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2019)
High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
M. Saito et al.
SCIENTIFIC REPORTS (2019)
High hole mobility (≥500 cm2V-1s-1) polycrystalline Ge films on GeO2-coated glass and plastic substrates
Toshifumi Imajo et al.
APPLIED PHYSICS EXPRESS (2019)
High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water
Kouta Takahashi et al.
APPLIED PHYSICS LETTERS (2018)
High-hole mobility Si1-xGex (0.1 <= x <= 1) on an insulator formed by advanced solid-phase crystallization
D. Takahara et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization
Ziheng Liu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Influence of annealing atmosphere on crystallization of amorphous Si1-xGex thin film by Raman spectroscopy
Nobuaki Makino et al.
THIN SOLID FILMS (2018)
Improving carrier mobility of polycrystalline Ge by Sn doping
Kenta Moto et al.
SCIENTIFIC REPORTS (2018)
Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization
Hiroshi Oka et al.
APPLIED PHYSICS EXPRESS (2018)
Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0-1) on an insulator by Al-induced layer exchange
K. Toko et al.
JOURNAL OF APPLIED PHYSICS (2017)
Nonlinear Properties of Ge-rich Si1-xGex Materials with Different Ge Concentrations
Samuel Serna et al.
SCIENTIFIC REPORTS (2017)
High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
Kaoru Toko et al.
SCIENTIFIC REPORTS (2017)
High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
Taizoh Sadoh et al.
APPLIED PHYSICS LETTERS (2016)
Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn
S. N. Khatami et al.
PHYSICAL REVIEW APPLIED (2016)
Investigation on the effective mass of Ge1-xSnx alloys and the transferred-electron effect
Lei Liu et al.
APPLIED PHYSICS EXPRESS (2015)
High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization
Wakana Takeuchi et al.
APPLIED PHYSICS LETTERS (2015)
Carrier and heat transport properties of polycrystalline GeSn films on SiO2
Noriyuki Uchida et al.
APPLIED PHYSICS LETTERS (2015)
70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge
K. Toko et al.
APPLIED PHYSICS LETTERS (2015)
Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition
A. A. Shklyaev et al.
THIN SOLID FILMS (2015)
Next Generation Device Grade Silicon-Germanium on Insulator
Callum G. Littlejohns et al.
SCIENTIFIC REPORTS (2015)
High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
Zhi Liu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Al-induced crystallization of amorphous SixGe1-x (0 ≤ x ≤ 1): Diffusion, phase development and layer exchange
Christian A. Niedermeier et al.
ACTA MATERIALIA (2014)
New materials for post-Si computing: Ge and GeSn devices
Suyog Gupta et al.
MRS BULLETIN (2014)
Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
Younghyun Kim et al.
SCIENTIFIC REPORTS (2014)
Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer
Masashi Kurosawa et al.
APPLIED PHYSICS LETTERS (2013)
High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth
Yuki Tojo et al.
APPLIED PHYSICS LETTERS (2013)
Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
S. Wirths et al.
APPLIED PHYSICS LETTERS (2013)
Divergent Astrovirus Associated with Neurologic Disease in Cattle
Linlin Li et al.
EMERGING INFECTIOUS DISEASES (2013)
The direct and indirect bandgaps of unstrained SixGe1-x-ySny and their photonic device applications
P. Moontragoon et al.
JOURNAL OF APPLIED PHYSICS (2012)
Raman study of strained Ge1-xSnx alloys
Hai Lin et al.
APPLIED PHYSICS LETTERS (2011)
In situ growth of Ge-rich poly-SiGe:H thin films on glass by RF magnetron sputtering for photovoltaic applications
Chao-Yang Tsao et al.
APPLIED SURFACE SCIENCE (2011)
Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x=0-1) on insulator
Kaoru Toko et al.
APPLIED PHYSICS LETTERS (2009)
Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon-Germanium Films
Munehiro Tada et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
Norio Hirashita et al.
APPLIED PHYSICS EXPRESS (2008)
Au-induced crystallization of hydrogenated amorphous Si1-xGex (0.2 ≤ x ≤ 1) thin films with chemical source at low temperature
Shanglong Peng et al.
MATERIALS CHEMISTRY AND PHYSICS (2008)
Ni-imprint induced solid-phase crystallization in Si1-xGex (x: 0-1) on insulator
Kaoru Toko et al.
APPLIED PHYSICS LETTERS (2007)
Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells
Noritaka Usami et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2007)
Possibility of increased mobility in Ge-Sn alloy system
Jay Deep Sau et al.
PHYSICAL REVIEW B (2007)
Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe
Minoru Mitsui et al.
APPLIED PHYSICS LETTERS (2006)
Influence of alloy composition on carrier transport and solar cell properties of hydrogenated microcrystalline silicon-germanium thin films
Takuya Matsui et al.
APPLIED PHYSICS LETTERS (2006)
Raman spectroscopy of Si1-xGe epilayers
F Pezzoli et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2005)
Versatile buffer layer architectures based on Ge1-xSnx alloys -: art. no. 191912
R Roucka et al.
APPLIED PHYSICS LETTERS (2005)
Aluminum-induced crystallization of amorphous silicon-germanium thin films
M Gjukic et al.
APPLIED PHYSICS LETTERS (2004)
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
G Taraschi et al.
SOLID-STATE ELECTRONICS (2004)
Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing
H Watakabe et al.
JOURNAL OF APPLIED PHYSICS (2004)
Electrical properties of polycrystalline Si1-xGex thin-films prepared by a solid-phase crystallization method
Y Aya et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2003)
分享论文
