期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 877, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.160291
关键词
Ga2O3; PLD; DUV photodetector; Furnace annealing
资金
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [NRF-2020R1A4A4078674]
- Ministry of Trade, Industry and Energy (MOTIE) [10069063]
- Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor device
Si-doped Ga2O3 photodetectors were studied with different annealing temperatures, showing that devices annealed at 500 degrees C had the highest photoresponsivity and external quantum efficiency, while devices annealed at 800 degrees C had the fastest switching speeds. These results are attributed to changes in defect densities from chemical bond formation between Si and O atoms.
We studied Si-doped Ga2O3 photodetectors with a metal-semiconductor-metal structure that were fabricated using pulsed laser deposition and a post-annealing process under an oxygen atmosphere in a temperature range from 500 degrees C to 800 degrees C. After post-annealing, the Si-doped Ga2O3 photodetectors with 500 degrees C was showed the highest photoresponsivity (0.34 A/W) and external quantum efficiency (166.23%), while the device with 800 degrees C was exhibited the fastest switching speeds (0.88 s/0.18 s) for the on/off switching. These results are due to changes in the defect densities from the chemical bond formation between Si and O atoms. Our results show that post thermal annealing of Si-doped beta-Ga2O3 layers can modify the photo detector performance depending on applications for high photoresponsivity or fast response time. (C) 2021 Elsevier B.V. All rights reserved.
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