期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 894, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.162542
关键词
First-principles calculation; Thermal conductivity; Carrier mobility; Thermoelectric property
资金
- National Natural Science Foundation of China [11504027, 51961031, 51541105]
- Foundation of Science and Technology Department of LiaoNing Province [2019ZD0494]
- LiaoNing Revitalization Talents Program [XLYC2007120]
- Key Project of Hebei Educational Department, China [ZD2018015]
The study reveals the influence of SnSe thickness on its thermoelectric properties, showing changes in electron mobility and thermal conductivity with increasing thickness. Thicker films of SnSe exhibit higher carrier mobility and lower thermal conductivity, leading to better thermoelectric performance.
Recently, SnSe of orthorhombic phase has attracted much attention due to its excellent performance in thermoelectricity, yet the thickness-dependent thermoelectric properties were poorly studied. We have investigated the thermoelectric transporting properties of few-layered (from 1 L to 4 L) and bulk SnSe by using density functional theory plus Boltzmann transport theory. We employed the electron-phonon Wannier method to obtain the accurate transporting parameters, i.e., carrier mobility as well as relaxation time, in contrast to those derived from deformation potential theory. Our results reveal that the band gap decreases from 0.91 eV (1 L) to 0.59 eV (bulk) as the thickness increases, and meanwhile the effective charge mass increases slightly. As bulk SnSe is thinned to the monolayer, the high frequency modes are stiffened while the low frequency modes are softened, and meanwhile the acoustic velocities become larger. At 300 K, the thermal conductivity of bulk SnSe takes 1.52, 0.80 and 0.41 W m(-1) K-1 for kappa(a), kappa(b) and kappa(c) respectively, in good agreement with the experimental values. Thermal conductivity of few-layered SnSe decreases slightly from 2.45 to 1.61 W m(-1) K-1 for kappa(a), and from 1.81 to 1.02 W m(-1) K-1 for kappa(b) as the layer number increases from 1 L to 4 L. The EPW calculations reveal that the electron mobility of n-type films increases rapidly from 24.4 cm(2)/V s (1 L) to 179.6 cm(2)/V s (4 L) and the hole mobility of p-type films increases from 47.2 cm(2)/V s (1 L) to 1211.1 cm(2)/V s (4 L) at 300 K as the thickness increases. Compared with the monolayer, thicker film of SnSe has larger carrier mobility as well as lower thermal conductivity, which leads to better thermoelectric performance. At 700 K, the figure of merit is enhanced from 0.22 (1 L) to 0.58 (4 L) for n-type films in electron density of -0.55 x 10(13)/cm(2). Our research casts some light on the future thermoelectric applications based on few-layered SnSe. (C) 2021 Elsevier B.V. All rights reserved.
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