期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 889, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.161580
关键词
Ag-Se-Te; Phase equilibria; Thermoelectric; Interfacial reaction
资金
- Ministry of Science and Technology, Taiwan [MOST 107-2923-E-007-005-MY3, MOST 110-2634-F-007-024]
This study investigates the phase equilibria information of the Ag-Se-Te ternary system, focusing on the reaction couples of Ag/Se, Ag2Te/Se, and Ag/Se-30at%Te at 350 degrees C. The results show no ternary compounds present and the formation of different phases in each reaction couple. The reaction paths and mass balances are well explained using the determined isothermal section of the system.
Phase equilibria information of the Ag-Se-Te ternary system is important as this system is used in thermoelectric applications. The Se and Te elements are the major constituents of many thermoelectric compounds, whilst the Ag element is widely used in the thermoelectric modules as an electrode. This study examines the reaction couples of Ag/Se, Ag/Se-30at%Te and Ag2Te/Se at 350 degrees C, as well as the isothermal section of the Ag-Se-Te system at 350 degrees C. There are five three-phase regions and no ternary compounds. The Ag/Se reaction couple shows the formation of the Ag2Se reaction layer with this phase having a very homogeneous composition. The reaction is very fast. The reaction layer is 550 mu m thick in the couple reacting for 2 min. The Ag2Te/Se reaction couple shows the formation of Ag2Se, liquid, and Te-rich phases. The reaction path in the Ag2Te/Se reaction couple is Ag2Te/(Se,Te)/Liquid/Ag2Se/Se. It is found that the reaction layer is 576 mu m thick in the couple reacting for 2.5 min. The Ag/Se-30at%Te reaction couple shows the formation of Ag2(Se,Te) and liquid phases. A very thick reaction zone of 2600 mu m is found after reacting for 2.5 min. The related reaction paths and mass balances of the reaction couples are well explained using the determined isothermal section of the Ag-Se-Te system at 350 degrees C. (c) 2021 Elsevier B.V. All rights reserved.
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