4.7 Article

Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 883, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.160826

关键词

2D SnSe2; SnO2 quantum dots; Broadband photodetector; Heterojunction; Schottky barrier

资金

  1. Defence Research Development Organization [DYSL-AST/CARS/CONTRACT/20-21/02]

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A D-2-D-0 hybrid heterojunction-based broadband photodetector with SnSe2/SnO2 hybrid structure was proposed to enhance the range of detection and performance. By synthesizing D-2 and D-0 nanoparticles using a simple method, the photodetector exhibited superior responsivity in UV, VIS, and NIR light with enhanced light-matter interaction. The flexible and low-cost strategy outlined in this study is ideal for applications such as wearable electronics and flexible security systems.
Despite their high absorption coefficients, most two-Dimensional (2D) Transition Metal Dichalcogenides (TMDC) based photodetectors have a narrow range of light absorption and employ sophisticated fabrication methods. To overcome this, we propose a D-2-D-0 hybrid heterojunction-based broadband photodetector with Tin Diselenide (SnSe2)/Tin Oxide (SnO2) hybrid structure to enhance the range of detection and per-formance of the photodetector. The D-2 and D-0 nanoparticles were synthesized using a simple, cost-effective, one-step hydrothermal method. Detailed physicochemical characterization studies demonstrate the formation of 2D hexagonal layers of SnSe2 nanoflakes with absorption in visible and near IR regions and rutile tetragonal structure of SnO2 Quantum dots (QDs) with absorption in UV region. The fabricated photodetector shows superior responsivity of 47.9, 16.8, and 6.51 mA/W in UV, VIS, and NIR light with enhanced light-matter interaction. The SnSe2/SnO2 heterostructures demonstrated an efficient interlayer charge transfer due to the strong coupling. The superior performance of the photodetector can be attributed to the sizeable tuning of bandgap upon optical excitation in the bulk heterojunction wherein the photocarriers are injected into the SnSe2 nanoflakes for efficient light absorption in the broadband spectrum. The response time of this device was observed to be 0.5, 0.5, and 0.93 s under the illumination of UV, visible, and NIR lights, respectively. The flexibility studies display excellent robustness and mechanical stability for similar to 2000 bending cycles at ambient conditions. Hence, due to its flexibility, low power, and low cost, the strategy outlined here is ideal for applications like wearable electronics, flexible security, and surveillance systems. (C) 2021 Elsevier B.V. All rights reserved.

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