Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric

We have demonstrated a record low 85 mV dec(-1) subthreshold slope (SS) at 300 K among the planar inversion-channel InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). Our MOSFETs using in situ deposited Al2O3/Y2O3 as a gate dielectric were fabricated with a self-aligned inversion-channel gate-first process. The temperature-dependent transfer characteristics showed a linear reduction of SS versus temperature, with the attainment of an SS of 22 mV dec(-1) at 77 K; the value is comparable to that of the state-of-the-art InGaAs FinFET. The slope factor of SS with temperature (m) is 1.33, which is lower than those reported in the planar InGaAs MOSFETs.

Automated summary

We have achieved a record low subthreshold slope in InGaAs MOSFETs at 300 K by using in situ deposited Al2O3/Y2O3 as a gate dielectric and a self-aligned inversion-channel gate-first process. The temperature-dependent transfer characteristics showed a linear reduction of subthreshold slope with temperature, reaching a value comparable to state-of-the-art InGaAs FinFET at 77 K.