4.3 Article

Characterization of epitaxial CVD graphene on Ir(111)/α-Al2O3(0001) by photoelectron momentum microscopy

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 61, 期 SD, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac4ad8

关键词

graphene; Ir(111); CVD; valence band photoelectron spectroscopy; photoelectron momentum microscopy; X-ray absorption spectroscopy

资金

  1. JSPS KAKENHI [19K05218, 20H02209]
  2. Joint Research by Institute for Molecular Science (IMS) [21-216]
  3. Nippon Sheet Glass Foundation for Materials Science and Engineering
  4. Grants-in-Aid for Scientific Research [20H02209, 19K05218] Funding Source: KAKEN

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This study characterized CVD-grown graphene on Ir(111)/alpha-Al2O3(0001) using photoelectron momentum microscopy and provided comprehensive insights into the properties of graphene, including its single-crystallinity, number of layers, crystal orientation, and interaction with the substrate, and their correlation with CVD growth conditions.
We characterized CVD-grown graphene with high single-crystallinity on Ir(111)/alpha-Al2O3(0001) by photoelectron momentum microscopy. A multi-functional photoelectron momentum microscope (PMM), which is installed with element-specific valence band photoelectron spectroscopy and X-ray absorption spectroscopy, is a complementary characterization tool to conventional methods, such as Raman spectroscopy and atomic force microscopy, for comprehensive and quantitative characterization of graphene/Ir(111). Using PMM, we characterized the properties of CVD-grown graphene including the single-crystallinity, number of layers, crystal orientation, and degree of interaction between graphene and Ir(111) and clarified the relationship between these properties and the CVD growth conditions.

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