High-performance p-channel transistors on flexible substrate using direct roll transfer stamping

Flexible electronics with high-performance devices are crucial for transformative advances in several emerging and traditional applications. To address this need, herein we present p-type silicon (Si) nanoribbons (NR)-based high-performance field-effect transistors (FETs) developed using an innovative direct roll transfer stamping (DRTS) process. First, ultrathin Si NRs (similar to 70 nm) are obtained from silicon on insulator wafers using the conventional top-down method, and then the DRTS method is employed to directly place the NRs onto flexible substrates at RT. The NRFETs are then developed following the RT fabrication process which includes deposition of high-quality SiN (x) dielectric. The fabricated p-channel transistors demonstrate high linear mobility similar to 100 +/- 10 cm(2) V-1 s(-1), current on/off ratio >10(4), and low gate leakage (<1 nA). Further, the transistors showed robust device performance under mechanical bending and at a wide temperature range (15 degrees C-90 degrees C), showing excellent potential for futuristic high-performance flexible electronic devices/circuits.

Automated summary

This paper presents high-performance field-effect transistors based on p-type silicon nanoribbons, which are directly placed on flexible substrates using a direct roll transfer stamping process. The fabricated transistors demonstrate high linear mobility, high on/off ratio, and low leakage current, and show robust device performance under mechanical bending and a wide temperature range, highlighting their potential for high-performance flexible electronic devices.