期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 31, 期 2, 页码 1555-1566出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2015.2416358
关键词
Electrothermal model; leakage current; silicon carbide (SiC) MOSFETs; short-circuit capability; thermal runaway
资金
- II-VI Foundation
- Oak Ridge National Laboratory under the U.S. Department of Energy's Vehicle Technologies Program
- Engineering Research Center Program of the National Science Foundation
- Department of Energy under NSF [EEC-1041877]
- CURENT Industry Partnership Program
This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. The experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.
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