期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 31, 期 3, 页码 2485-2495出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2015.2433017
关键词
Power MOSFET; analytical Models; capacitors; nonlinear circuit and current measurements
资金
- Asturian Gobernment through the grant Beca Predoctoral Severo Ochoa [BP14-140]
- project E2 SG
- ECSEL Joint Undertaking
A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon super-junction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong capacitive nonlinearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. A detailed analysis on how to obtain this electrical characteristic is included in this study. Finally, the high accuracy of the model is validated with experimental measurements in a double-pulse buck converter setup by using commercial SJ MOSFET, as well as advanced device prototypes under development.
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