Research on improving the discharge cutting efficiency of N-type high-resistance silicon based on electroless plating

Aimed at the low efficiencies of wire electrical discharge machining of high-resistance silicon, this paper proposes a procedure that also improves the efficiency of silicon crystal discharge cutting, that is, the use of electroless copper plating on the silicon surface. A semiconductor equivalent discharge circuit model was established, the current-voltage characteristics of silicon crystals under different power feeding methods were studied, and the processing performances of different power feeding methods of silicon were compared. The test results show that electroless copper plating can significantly reduce the contact resistance of silicon and total resistance of the loop and increase the processing current. When the voltage is 160 V, the processing efficiency of the copper foil increases by 73%, while its surface roughness and width also slightly increase.

Automated summary

The use of electroless copper plating on the silicon surface can significantly reduce contact resistance and total resistance, increase processing efficiency and current. This method can improve the efficiency of silicon crystal discharge cutting, but may also slightly increase surface roughness and width.