期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 31, 期 12, 页码 8042-8045出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2016.2562030
关键词
DBC layout; parallel connection; SiC MOSFET; power module; packaging technology
This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical analysis and current balancing performance of the proposed DBC layout.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据