Exploring the impact of HgI2 doping on optical, structural and morphological properties of pure CH3NH3PbI3 perovskite

In current work, authors used a single-step spin coating method to fabricate CH3NH3PbI3, and CH3NH3Pb0.97Hg.I-03(3) perovskite thin films. The influence of Hg doping on optical and structural properties has been investigated systematically. XRD, SEM, and UV-Vis spectroscopy have been used to characterize their structural, morphological, and optical properties. Also, Rietveld refinement has been used to investigate the detailed structural parameters. Morphological analysis unveil crystallinity enhancement and change in surface morphology with Hg doping in the pristine CH3NH3PbI3 perovskite. The bandgap of HgI2 doped perovskite was found to be similar to 1.56 eV, which is ideal for photovoltaic applications. A lower value of lattice strains and stacking faults for doped perovskite also make this material composition ideal for perovskite solar cell applications. UV-VIS spectroscopy has shown the enhancement of absorption energy for 3% HgI(2 )doping in pristine perovskite. These outcomes open up the entrance of different perceptiveness of transition metals to terminate the leadfree scheming of novel shielding materials with innovative photovoltaic properties.

Automated summary

In this study, CH3NH3PbI3 and CH3NH3Pb0.97Hg.I-03(3) perovskite thin films were fabricated using a single-step spin coating method, and the influence of Hg doping on optical and structural properties was systematically investigated. The doped perovskite showed a bandgap similar to 1.56 eV, making it ideal for photovoltaic applications. The results suggest that transition metals like Hg can enhance the absorption energy and structural properties of lead-free perovskite materials for innovative photovoltaic applications.