期刊
INFRARED PHYSICS & TECHNOLOGY
卷 118, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.infrared.2021.103879
关键词
Heat resistive; Reflector; Alloy; Infrared; light-emitting diode (LED)
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03012069,2018R1D1A1B070 50752]
This study investigated the use of heat-resistive reflectors to improve the efficiency of wafer-bonded reflective 850 nm infrared light-emitting diodes (LEDs). By incorporating Al/Au alloyed reflectors, it was found that the reflectivity and output power were significantly improved, showing the potential for more efficient reflective infrared LEDs.
This study investigated the use of heat-resistive reflectors to improve the efficiency of wafer-bonded reflective 850 nm infrared light-emitting diodes (LEDs). The Au-based heat-resistive reflectors were synthesized with added Ni, Ti, Cu, and Al, and heat treated at 450 degrees C. The Al/Au alloyed reflector exhibited the highest reflectivity of nearly 90% when incorporated into the wafer-bonded epi-layer (Al0.3Ga0.7As/GaP). Further, the output power of 850 nm LED chips based on the pure Au and alloyed reflectors were compared, where the Al/Au alloyed reflector led to a 1.4-fold increase in output power compared to the pure Au reflector. This increase is attributed to enhanced heat-resistant reflectivity of the Al/Au alloyed reflector. Therefore, the Al/Au alloyed reflector shows promise for the development of more efficient reflective infrared LEDs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据