Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability

In this letter, we achieved significantly enhanced avalanche ruggedness and surge current capability in GaN junction barrier Schottky (JBS) diode for highly reliable power operation. Based on the selective Mg-ion implantation technology, the GaN JBS diode obtains superior electrostatic performances, including 830-V breakdown voltage, 150-m omega specific on-state resistance, and 0.5-V turning on voltage. Meanwhile, zero reverse recovery behaviors are observed even under extreme switching conditions of 600 V/10 A. During the reliability evaluation in the inductive load circuits, crucial avalanche capability with avalanche breakdown voltage over 965 V, avalanche energy up to 57.8 mJ, and more than 10 000 repetitive avalanche breakdown events are demonstrated. Together with the surge current tolerance up to 65 A and surge energy of 6.0 J, a large safe-operation-area under both forward and reverse inductive spikes is realized for the GaN-based rectifier.

Automated summary

Through selective Mg-ion implantation technology, GaN JBS diode achieved significantly enhanced avalanche ruggedness and surge current capability for highly reliable power operation, demonstrating excellent electrostatic performances, zero reverse recovery behaviors, crucial avalanche capability, and a large safe-operation-area under both forward and reverse inductive spikes even under extreme switching conditions.