期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 15, 期 3, 页码 465-472出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2016.2544782
关键词
Conducting filament; dynamics; electrochemical reactions; metal nanoclusters; structure
类别
资金
- 1000 Youth Talents Program of China
- National Science Foundation of China [61421005, 61376087, 61574007]
- National Basic Research Program of China [2011CBA00601]
- National High Technology Research and Development Program of China [2015AA016500, 2011AA010401, 2011AA010402]
Characterizations of resistive switching (RS) devices, especially through direct, in situ methodologies, provide valuable information that could lead to improved insights into the device switching mechanism and device design and optimization. Here, we discuss the characterization efforts on resistive switching devices to date, with emphasis on direct transmission electronmicroscopy observations on conducting filament formation and growth dynamics. Other characterization techniques used in filament analysis such as spectroscopic and topographic characterizations will also be covered. In the end, we will discuss challenges to be addressed and advances that are needed to further our understanding of dynamic ionic, electronic, and structural effects involved in the RS process.
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