期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 11, 页码 5623-5628出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3101183
关键词
Au nanoparticles (NPs); electric hysteresis loop; electrostatic effect; germanium (Ge) photodetector; photoresponse enhancement
资金
- National Key Research and Development Program of China [2019YFB2204400]
Au nanoparticles were deposited on germanium devices to study their impact on the electronic transport and photodetection properties of Ge metal-semiconductor-metal photodetectors. The introduction of Au NPs led to significant hysteresis behavior and improved responsivity at the optical communication wavelength of 1.55 μm. This increase in responsivity was attributed to a type-II liked energy band alignment, enhancing the spatial electron-hole separation effect. These findings offer inspiration for the development of innovative optoelectronic devices.
Au nanoparticles (NPs) were drop-casted onto germanium (Ge) devices to investigate the influence of Au NPs on the electronic transport and photodetection properties of Ge metal-semiconductor-metal photodetectors. A significant hysteresis behavior was observed in the current-voltage curves of the Au NP-decorated Ge photodetector, which was ascribed to the energy band bending below the Au NPs and the electrostatic effect of image charges in the Au NPs. More interestingly, at the optical communication wavelength of 1.55 mu m, the introduction of Au NPs effectively improved the responsivity of the device from0.18 to 0.92A/W. Rather than the localized surface plasmon resonance effect, the increase of responsivity in the Au NP-decorated Ge photodetector was caused by a type-II liked energy band alignment, which enhanced the spatial electron-holeseparation effect. These results provide inspiration for the development of novel optoelectronic devices.
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