期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 3, 页码 1143-1148出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3145327
关键词
beta-Ga2O3; in situ O-3 pretreatment; metal oxide semiconductor field-effect phototransistor (SBPT); performance improvement; solar blind
资金
- National Key Research and Development Program of China [2018YFB0406504]
- National Natural Science Foundation of China [61874083]
- Natural Science Basic Research Program of Shaanxi [2021JC-24]
In this study, a high-performance beta-Ga2O3 solar-blind metal oxide semiconductor field-effect phototransistor (SBPT) was demonstrated with low-temperature in situ ozone (O-3) pretreatment technology. The O-3 pretreatment improved the Ga-O bonding quality and exhibited excellent photoelectrical properties in the device.
In this work, we demonstrated a high-performance beta-Ga2O3 solar-blind metal oxide semiconductor field-effect phototransistor (SBPT) with low-temperature in situ ozone (O-3) pretreatment technology. The Ga-O bonding quality and oxygen content of the beta-Ga2O3 surface before and after O-3 pretreatment were first determined by X-ray photoelectron spectroscopy (XPS). The percentage of substable O to total O decreased from 8.6% to 2.7% after the in situ O-3 pretreatment, and the peaks of substable Ga-O bonds moved closer to those of stable Ga-O bonds, indicating an improvement in the Ga-O bonding quality. Compared with SBPT without O-3 pretreatment, devices with O-3 pretreatment exhibited excellent photoelectrical properties, including a large photo-to-dark current ratio (PDCR) of 1.4 x 10(7), a high UV-C/UV-A rejection ratio (R-254 nm/R-365 nm) of 2.1 x 10(7), a high responsivity (R) of 4.37 x 10(6) A/W, a large quantum efficiency (EQE) of 2.2 x 10(7)%, and a high detectivity (D*) of 2.8 x 10(18) Jones. The rise time (tau(r)) and decay time (tau(d)) are extracted to be 70 and 23ms after O-3 pretreatment. The optimized parameters of the device illustrate that low-temperature in situ O-3 pretreatment technology is a simple but effective approach to improve the performance of beta-Ga2O3-based SBPT.
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