期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 12, 页码 6365-6371出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3116931
关键词
Cryogenics; Wave functions; Computational modeling; Oscillators; IP networks; Couplings; Stationary state; Advanced CMOS; bias temperature instability (BTI); cryo-CMOS; cryogenic; physical modeling
资金
- imec's Industrial Affiliation Program on Quantum Computing and Cryoelectronics
- Austrian Research Promotion Agency FFG (Take Off Programme) [861022, 867414]
- European Union [871813]
- Austrian Federal Ministry for Digital and Economic Affairs
- National Foundation for Research, Technology and Development
- Christian Doppler Research Association
The study discusses the effectiveness of using the WKB approximation method to simulate charge trapping behavior at low temperatures. It was found that this approximation method can provide excellent results and can be used to model charge trapping behavior at low temperatures.
Charge trapping is arguably the most important detrimental mechanism distorting the ideal characteristics of MOS transistors, and nonradiative multiphonon (NMP) models have been demonstrated to provide a very accurate description. For the calculation of the NMP rates at room temperature or above, simple semiclassical approximations have been successfully used to describe this intricate mechanism. However, for the computation of charge transition rates at cryogenic temperatures, it is necessary to use the full quantum mechanical description based on Fermi's golden rule. Since this is computationally expensive and often not feasible, we discuss an efficient method based on the Wentzel-Kramers-Brillouin (WKB) approximation in combination with the saddle point method and benchmark this approximation against the full model. We show that the approximation delivers excellent results and can, hence, be used to model charge trapping behavior at cryogenic temperatures.
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