期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 11, 页码 5894-5900出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3116218
关键词
Nanoribbons; Electrodes; Boron; Stationary state; Nitrogen; Spintronics; Photonic band gap; Boron nitride nanoribbons (BNNRs); density functional theory (DFT); giant magnetoresistance (GMR)
The structural stability, spin-polarized electronic and transport properties of edge-hydrogenated zigzag boron nitride nanoribbons were investigated using density functional theory combined with a non-equilibrium Green's function approach. The observed high spin giant magnetoresistance and rectification behavior in these nanoribbons have potential applications for designing future spintronic nanodevices.
The structural stability, spin-polarized electronic and transport properties of edge-hydrogenated zigzag boron nitride nanoribbons (ZBNNRs) are investigated using density functional theory (DFT) combined with a non-equilibrium Green's function (NEGF) approach. The considered structures are observed to be energetically stable in the magnetic ground state. The calculated spin-dependent transport properties indicate that a selective-edge hydrogenated ZBNNR device shows bipolar spin filter characteristics. Interestingly, high spin giant magnetoresistance (GMR) and a rectification ratio (RR) are observed of the order of 10(15) and 10(10), respectively. The observed GMR and rectification behavior in edge-hydrogenated ZBNNRs have potential applications for designing future spintronic nanodevices.
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