期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 3, 页码 981-987出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3143491
关键词
Carrier transport deep level; transient spectroscopy (DLTS); minority carrier traps; p-n heterojunction
资金
- State Key Research and Development Project of Jiangsu [BE2018115]
- State Key Research and Development Project of Guangdong [2020B010174002]
- National Natural Science Foundation of China [61774081, 91850112]
Defects/traps in beta-Ga2O3 have been investigated and identified in Ni/beta-Ga2O3 Schottky barrier diode (SBD) and NiO/beta-Ga2O3 p(+)-n heterojunction diode (HJD) by deep level transient spectroscopy (DLTS). The study provides insights into the carrier transport mechanisms in Ga2O3-based power devices.
Identifying defects/traps is of vital importance for the implementation of high-performance Ga2O3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide (beta-Ga2O3) have been investigated and identified by means of deep level transient spectroscopy (DLTS) in Ni/ beta-Ga2O3 Schottky barrier diode (SBD) and NiO/beta-Ga2O3 p(+)-n heterojunction diode (HJD). For both diodes, a dominant energy level ofmajority carrier (electron) trap states is determined to be EC-(0.75-0.79) eV with a concentration of (2.4-4.1) x 1013 cm(-3). Meanwhile, an additional trapping level at EV + 0.14 eV with a concentration of 1.2 x 10(14) cm-3 y(ie)ld is present in NiO/ beta-Ga2O3 bipolar HJD but absent in theNi/beta-Ga2O3 SBD unipolar counterpart. The detection of such minority carrier traps originates from the hole injection throughtrap-assistedtunneling (TAT) from p+-NiO to beta-Ga2O3. The bias- and frequency-dependent DLTS characteristics identify that such shallow-levelminority carrier traps are located in the beta-Ga2O3 bulk region rather not interfacial states at the NiO/beta-Ga2O3 heterointerface. The identification of bothmajority andminority carrier traps in thisworkmay shed light on the in-depth understanding of carrier transport mechanisms in Ga2O3-based unipolar and bipolar power devices.
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