相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Jakob Michl et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Toward Automated Defect Extraction From Bias Temperature Instability Measurements
Dominic Waldhoer et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors
Arnout Beckers et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors
Michael Waltl
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2020)
Applicability of Shockley-Read-Hall Theory for Interface States
Bernhard Ruch et al.
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)
Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs
Arnout Beckers et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)
Challenges in Scaling-up the Control Interface of a Quantum Computer
D. J. Reilly
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)
Cryogenic MOSFET Threshold Voltage Model
Arnout Beckers et al.
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) (2019)
Comphy - A compact-physics framework for unified modeling of BTI
G. Rzepa et al.
MICROELECTRONICS RELIABILITY (2018)
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W. Goes et al.
MICROELECTRONICS RELIABILITY (2018)
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
Arnout Beckers et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Theoretical models of hydrogen-induced defects in amorphous silicon dioxide
Al-Moatasem El-Sayed et al.
PHYSICAL REVIEW B (2015)
Engineering the quantum-classical interface of solid-state qubits
David J. Reilly
NPJ QUANTUM INFORMATION (2015)
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Tibor Grasser
MICROELECTRONICS RELIABILITY (2012)
Alignment of hydrogen-related defect levels at the Si-SiO2 interface
Audrius Alkauskas et al.
PHYSICA B-CONDENSED MATTER (2007)
Negative bias temperature instability: What do we understand?
Dieter K. Schroder
MICROELECTRONICS RELIABILITY (2007)
Observations of NBTI-induced atomic-scale defects
Jason P. Campbell et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2006)
Modeling of the structure and properties of oxygen vacancies in amorphous silica
S Mukhopadhyay et al.
PHYSICAL REVIEW B (2004)
Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartz -: art. no. 024108
VB Sulimov et al.
PHYSICAL REVIEW B (2002)
First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
PE Blöchl
PHYSICAL REVIEW B (2000)
Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures
JH Scofield et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
