相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
Nicola Modolo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor
Azwar Abdulsalam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
Jin Wei et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Mechanism of Threshold Voltage Shift in p-GaN Gate AlGaN/GaN Transistors
Xi Tang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Analytical Model for the Threshold Voltage of p-(Al) GaN High-Electron-Mobility Transistors
Benoit Bakeroot et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
V-TH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress
Jiabei He et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
Tian-Li Wu et al.
IEEE ELECTRON DEVICE LETTERS (2017)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Hanxing Wang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2017)
On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
L. Efthymiou et al.
APPLIED PHYSICS LETTERS (2017)
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Finella Lee et al.
IEEE ELECTRON DEVICE LETTERS (2015)
A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
Naveen Karumuri et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
A Survey of Wide Bandgap Power Semiconductor Devices
Jose Millan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage
Injun Hwang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Injun Hwang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
GaN on Si Technologies for Power Switching Devices
Masahiro Ishida et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Yasuhiro Uemoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate
Takahiro Fujii et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
