Nano Device Simulator-A Practical Subband-BTE Solver for Path-Finding and DTCO

We present an in-depth discussion on the subband Boltzmann transport (SBTE) methodology, its evolution, and its application to the simulation of nanoscale MOSFETs. The evolution of the method is presented from the point of view of developing a commercial general-purpose SBTE solver, the GTS nano device simulator (NDS). We show a wide range of applications SBTE is suited for, including state-of-the-art nonplanar and well-established planar technologies. It is demonstrated how SBTE can be employed both as a path-finding tool and a fundamental component in a DTCO-flow.

Automated summary

This paper provides an in-depth discussion on the evolution and applications of subband Boltzmann transport (SBTE) methodology in the simulation of nanoscale MOSFETs, showcasing its versatility in both nonplanar and planar technologies as well as its role as a fundamental component in a DTCO-flow.