The Optimization of 3.3 kV 4H-SiC JBS Diodes

The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the ON- and OFF-state of the device. All the diodes tested displayed high blocking voltages and ideal turn-on characteristics up to the rated current of 2 A. However, the leakage current and the Schottky barrier height (SBH) were found to scale with the ratio of Schottky to p(+) regions. Full Schottkys, without p(+) regions, and those with very wide Schottky regions had the lowest SBH (1.61 eV for Ni, 1.11 eV for Mo, and 0.87 eV for Ti) and the highest leakage. Those diodes with the lowest Schottky openings of 2 mu m had the lowest OFF-state leakage, but they suffered severe pinching from the surrounding p(+) regions, increasing their SBH. The best performingJBS diodeswere Ni andMo deviceswith the narrowest pitch, with the p(+) implants/Schottky regions both 2 mu m wide. These offered the best balanced device design, with excellent OFF-state performance, while the Schottky ratio guaranteed a relatively low forward voltage drop.

Automated summary

The article discusses a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky diodes. Different P-region widths and spacings were varied to enhance device performance, resulting in Ni and Mo devices with the narrowest pitch being the best performers with balanced device design and relatively low forward voltage drop.