Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

In this work, amorphous praseodymium-doped In-Sn-Zn-O (ITZO-Pr) thin-film transistors (TFTs) were fabricated with improved negative-bias illumination stress (NBIS) stability under different radio frequency (RF) magnetron sputtering powers. The optimized ITZO-Pr TFTs presented field effect mobility (mu(FE)) of 20.9 cm(2).V-1.s(-1), steep subthreshold (SS) of 0.27 V/dec, and small threshold voltage shift (Delta V-th = -2.12 V) under NBIS (-20 V, 3600 s). All Pr-doped devices exhibited a reduction in light responsivity of more than one order of magnitude compared with ITZO TFTs. Moreover, after Pr doping, relaxation processes of photoelectrons changed and then the activation energy (E-a) of light-induced electrons relaxation decreased, which enhanced the NBIS stability of ITZO TFTs effectively.

Automated summary

In this study, amorphous praseodymium-doped In-Sn-Zn-O thin-film transistors (ITZO-Pr TFTs) were fabricated under different RF magnetron sputtering powers to improve negative-bias illumination stress (NBIS) stability. The optimized ITZO-Pr TFTs showed improved field effect mobility and reduced light responsivity compared to ITZO TFTs. Furthermore, Pr doping altered the relaxation processes of photoelectrons and lowered the activation energy, enhancing the NBIS stability of ITZO TFTs.