4.6 Article

Rectangular Grating Slow-Wave Structure With a Slot Embed Electron Beam for High-Power Terahertz Radiation

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 3, 页码 1359-1367

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3130567

关键词

Backward wave oscillator (BWO); dispersion characteristics; rectangular grating; slow-wave structure (SWS); terahertz (THz) radiation source

资金

  1. National Natural Science Foundation of China [61831001, U1832193]
  2. National Key Research and Development Program of China [2017YFE0130000, 2017YFA0701003]

向作者/读者索取更多资源

In this study, a new structure is proposed to enhance the output power of a 0.5-Terahertz backward wave oscillator. Numerical simulations show that this structure can significantly improve the output performance and reduce the time of start oscillation. Moreover, the effect of factors such as conductivity and roughness on the output power is studied.
To enhance the output power of 0.5-Terahertz (THz) backward wave oscillator (BWO), a grating loaded rectangular waveguide(GLRW) slow-wave structure (SWS) with a slot embed electron beam (SEEB) is proposed in present work. For the designs and optimizations of BWO GLRW SWS with SEEB, the dispersion equations are derived with a field matching method (FMM) and solved by a numerical method; the results show that the coupling impedances are remarkably enhanced. Moreover, the output performances are studied with a help of particle-in-cell (PIC) simulation, and the simulated results show that the BWO operation voltage is 25 kV and the current is 40 mA; the output power 18.9 W of the perfect electronic conductor SWS with SEEB is obtained, which is improved about 1.5 times. On the other hand, the time of start oscillation is decreased to 50%, which is compared with that the conventional SWS without slot. As for the THz vacuum electronic devices (VED), the amplitudes of output power are remarkably affected by the conductivity and roughness of SWS; therefore, the determinate factors are studied, and the PIC results show that the maximum power is about 5-7 W when the conductivity is 3-5 x 10(7) S/m. The proposed scheme affords a promising option for the developing of high-power THz source.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据