期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 4, 页码 2002-2008出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3148700
关键词
Dielectrics; OFETs; Performance evaluation; Thermal stability; Surface morphology; Bending; Circuit stability; Bendability; bilayer dielectric; electromechanical stability; operational stability; organic field-effect transistors (OFETs)
资金
- Science and Engineering Research Board, Department of Science and Technology, Government of India [S/SERB/SPT/20180013]
- Visvesvaraya Young Faculty Research Fellowship (YFRF) Scheme [Ministry of Electronics and Information Technology (IT)], Government of India
This study demonstrates flexible organic field-effect transistors (OFETs) with a PVA/PAA bilayer gate dielectric. These devices exhibit high electrical stability and electromechanical stability, and can be used for circuit applications.
Flexible organic field-effect transistors (OFETs) consisting of polyvinyl alcohol (PVA)/polyelectrolyte polyacrylic acid (PAA) bilayer gate dielectric are demonstrated. These devices exhibited maximum field-effect mobility of mu(max) similar to 0.94 cm(2)center dot V-1 center dot s(-1) with an average of mu(avg) similar to 0.7 (+/- 0.1) cm(2)center dot V-1 center dot s(-1) in the saturation regime and I-on/I-off of similar to 10(4) with an operating voltage of -5 V. Apart from high electrical stability upon bias stress and repeated measurement of transfer curves, these devices showed excellent stability in electrical performance upon being subjected to sequential bending in various directions, i.e., vertical, horizontal, and diagonal to the channel length. Even after the application of 500 cycles of bending, no significant degradation in I-on was observed. This very high electromechanical stability in devices was achieved due to a super strong and highly tough hydrogen-bonded polyelectrolyte/polymer bilayer dielectric. In addition, external resistor-loaded inverters were also demonstrated with these devices to evaluate the circuit performance.
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