An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory

We characterize SET/RESET cycling effects on read-disturb failure time in the low resistance state (LRS) of a hafnium-oxide resistive memory cell. We find that the read-disturb failure time degrades by orders of magnitude after SET/RESET cycling. An analytical LRS read-disturb failure time model including cycling induced trap generation rate and its influence on read-disturb characteristics is developed. We compare our read-disturb model with measured results in a wide range of read voltage and SET/RESET cycle number. Good agreement between modeled and measurement results is obtained. We evaluate read-disturb failure time in post-cycling cells for different read failure criteria.

Automated summary

The study reveals that read-disturb failure time in the low resistance state of a hafnium-oxide resistive memory cell degrades significantly after SET/RESET cycling. An analytical model is developed to describe this degradation, and it shows good agreement with measured results. Different read failure criteria also have an impact on read-disturb failure time in post-cycling cells.