期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
卷 68, 期 12, 页码 4876-4888出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2021.3122381
关键词
Memristors; Resistance; Logic gates; Layout; Topology; MOSFET; Integrated circuit modeling; CAD tool; circuit design; hybrid CMOS; memristor; in-memory computation; low-power; RRAM
资金
- Engineering and Physical Sciences Research Council (EPSRC) Programme under Functional Oxide Reconfigurable Technologies (FORTE) [EP/R024642/1, H2020-FETPROACT-2018-01]
- RAEng Chair in Emerging Technologies [CiET1819/2/93]
- EPSRC [EP/R024642/1] Funding Source: UKRI
The memristive device's capabilities of in-memory computation, reconfigurability, low power operation, and multistate operation make it a suitable candidate for designing electronic circuits with a broad range of applications. Its integrability with CMOS enables its use in logic circuits. This work demonstrates a step-by-step guide for introducing memristor into the standard integrated circuit design flow, serving as a useful reference for both device developers and circuit designers.
The capability of in-memory computation, reconfigurability, low power operation as well as multistate operation of the memristive device deems them a suitable candidate for designing electronic circuits with a broad range of applications. Besides, the integrability of memristor with CMOS enables it to use in logic circuits too. In this work, we demonstrate with examples the design flow for memristor-based electronics, after the custom memristor model already being integrated and validated into our chosen Computer-Aided Design (CAD) tool to performing layout-versus-schematic and post-layout checks including the memristive device. We envisage that this step-by-step guide to introducing memristor into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with memristive-enhanced systems.
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