Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage

Schottky barrier height modulation (SBHM) mechanism is utilized on metal-insulator-semiconductor tunnel diodes (MISTD) to achieve high photon current gain. The photon current gain can reach over 24000 at 2.5 V for the MISTD with oxide thickness 3.11 nm under photon flux of 1.03 x 10(12) cm(-2)sec-(1) . The operation voltage can go down to below 1 V depending on the oxide thickness of MISTD and the requirement of the gain. For example, the MISTD with oxide thickness 2.89 nm can produce photon current gain above 2800 at 1 V under photon flux of 1.03 x 10(12) cm(-2)sec-(1). It is found that the devices can reach an electric field in the order of 10(4)-10(5) V/cm under low operation voltage, which is helpful for high-speed applications. MISTD with gate metal and oxide thickness being properly chosen is simple in structure but effective in photon sensing.

Automated summary

By utilizing the Schottky barrier height modulation mechanism, metal-insulator-semiconductor tunnel diodes (MISTD) achieve high photon current gain, with the operation voltage being able to go down and assist in high-speed applications.