期刊
IEEE SENSORS JOURNAL
卷 22, 期 4, 页码 3172-3180出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2022.3141929
关键词
Germanium; Silicon; Dual band; Photodiodes; Dark current; Voltage measurement; Readout electronics; Dual-band imaging; dual-band photodetector; Ge-on-Si; ROIC; SiGe
资金
- Italian Ministry of Defense [P.N.R.M. a2013.102]
This paper demonstrates the operation of a Ge-on-Si multipixel array and verifies its imaging capabilities through an experiment. The research findings are of great significance for the development of integrated imaging systems.
Photodetectors based on a Ge-on-Si platform were widely studied over the last two decades, rapidly becoming the technology of choice for CMOS-integrated optoelectronic systems operating in the near infrared. Recently, we demonstrated a proof-of-concept device realized with a back-to-back, Ge-on-Si double photodiode with dual-band optical sensitivity and voltage-tunability characteristics. Such a device represents the cornerstone for the development of integrated imaging systems operating both in the visible and in the near infrared spectral ranges. To achieve this ambitious goal, however, several technology improvements are needed starting from the fabrication of a multipixel array of dual-band photodetectors. Moreover, given the peculiar electronic behavior of the proposed device, specific readout electronics must be developed and integrated onto a CMOS platform. In this paper we demonstrate the operation of a Ge-on-Si multipixel array with a custom-developed readout integrated chip. We show a complete system characterization, also demonstrating its imaging capabilities with a simple experiment for the determination of the intensity profile of two different laser beams.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据