期刊
IEEE SENSORS JOURNAL
卷 22, 期 6, 页码 5644-5650出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2022.3150254
关键词
Gold; II-VI semiconductor materials; Zinc oxide; Sensors; Substrates; Crystals; X-ray scattering; ZnO nanostructure; Au NP; ultraviolet photodetector; HTM process
资金
- Ministry of Science and Technology [MOST 109-2221-E-239-031-MY2, 108-2622-E-239-010-CC3, 106-2221-E-239-037MY3]
In this study, gold nanoparticles were used to modify zinc oxide nanostructures, enhancing the performance of ultraviolet photodetectors. Single-crystalline nanorods with hexagonal wurtzite structures were obtained through a hydrothermal synthetic route, showing that adsorption of gold can increase conductivity and improve UV sensing capabilities.
In this work, we use gold (Au) nanoparticles (NPs) to modify zinc oxide (ZnO) nanostructures and improve the performance of ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs). The surface morphology, crystal performance, optical characteristic, and electrical property of the nanostructures were determined by using several instruments [e.g. X-ray diffractometer, field-emission scanning electron microscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and semiconductor parameter analyser]. Single-crystalline one-dimensional (1-D) nanorods (NRs) with hexagonal wurtzite structures were obtained via a facile hydrothermal synthetic route. The ZnO and Au/ZnO NRs with direct current magnetron sputtering times (i.e. 0 and 10 s) were labelled ZOA-0 and ZOA-1 samples, respectively. When the applied voltage was 1 V, ZOA-0 and ZOA-1 samples had dark currents (I-dark) of 2.21 x 10(-8) and 3.28 x 10(-9) A, respectively, in the photocurrents (I-ph) of 1.35 x 10(-7) and 4.33 x 10(-6) A, respectively, under UV irradiation. The I-ph/I-dark ratios of ZOA-0 and ZOA-1 NRs were 6 and 1320, respectively. As a result, the adsorption of Au on ZnO NRs can increase the conductivity of UV MSM PDs and improve the responsivity of devices for UV-sensing.
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