期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 33, 期 24, 页码 1415-1418出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2021.3124307
关键词
Photovoltaic cells; Junctions; Optical surface waves; Silicon; Surface treatment; Nanostructures; Surface morphology; Carrier multiplication; implantation; silicon; solar cells; reflectance; recombination; UV~photons
资金
- Academy of Finland [331313]
- European Metrology Programme for Innovation and Research (EMPIR) Program [19ENG05 NanoWires]
- European Union's Horizon 2020 Program
- Academy of Finland
By optimizing boron implantation parameters and combining them with non-reflective nanostructures and atomic layer deposited Al2O3 surface passivation, silicon solar cells can achieve an increase in external quantum efficiency with decreasing wavelength, even exceeding 100%. This suggests that carrier multiplication resulting from absorption of high energy photons could be utilized for energy production in solar cells.
Silicon solar cells are known to suffer from poor emitter performance that is seen as reduced external quantum efficiency at wavelengths below 500 nm. This is due to common tradeoff between electrical and optical performance. Here we demonstrate that no such tradeoff is needed when optimized boron implantation parameters are combined with non-reflective nanostructures and atomic layer deposited Al2O3 surface passivation. As a result, in our solar cells the external quantum efficiency actually increases with decreasing wavelength and reaches even above 100% at short wavelengths. This result indicates that carrier multiplication caused by absorption of high energy photons could be utilized for energy production in solar cells.
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